3 . 1 0 . 2 5 6. 9 0. 25 5. 9 0. 25 2. 3 0. 15 1. 3 0. 25 0.203max 7.8 0. 2 0.25 0.06 features low cost low leakage low forward voltage drop high current capability mechanical data c a s e : j e d e c d o - 2 1 4 a b , m o l d e d p l a s t i c t e r m i n a l s : s o l d e r a b le p e r mil- std-202,method 208 polarity: color band denotes cathode w e i g h t : 0 . 0 0 7 o u n c e s , 0 . 21 g r a m s mounting position: any ratings at 25 ambient temperature unless otherwise specified. single phas e,half wave,60 hz,res is tive or inductive load. for capacitive load,derate by 20%. u f 3 d u f 3 g u f 3 j u f 3 k u f 3 m maximum recurrent peak reverse voltage v rrm 200 400 600 800 1000 v ma x imu m rms v o lt a ge v rms 140 280 420 560 700 v maximum dc blocking voltage v dc 200 400 600 800 1000 v maximum average f orw ard rectif ied current @t l =90 peak forw ard surge current 8.3ms single half -sine-w ave superimposed on rated load @t j =125 m a x i m um i n s t antaneous f o r w a r d v o l t a ge a t 3 .0 a v f 1.4 v maximum reverse current @t a =25 at rated dc blocking voltage @t a = 1 25 typical reverse recovery time (note1) t rr ns typical junction capacitance (note2) c j pf typical thermal resistance (note3) r ja /w operating junction temperature range t j storage temperature range t stg 75 15 12 i r 2. measured at 1.0mhz and applied rev erse v oltage of 4.0v dc. 1.0 1 5 1 0 0 50 voltage range: 50 --- 1000 v curr e n t : 3 . 0 a - 55 ---- + 150 35 do-214ab( s m c) maximum ratings and electrical characteristics the plastic material carries u/l recognition 94v-0 100 50 note: 1. measured with i f =0.5a, i r =1a, i rr =0.25a. a u f 3 a - - - u f 3 m a 1 0 easily cleaned with alcohol,isopropanol and similar solvents i f ( av) 3 . 0 surface mount rect ifiers 70 units - 55 ---- + 150 u f 3 a u f 3 b 50 100 a 10 0 i fsm 1.7 dimensions in millimeters www.diode.kr diode semiconductor korea
1 2 4 6 10 20 40 60 100 200 0.1 0.2 0.4 1 2 4 10 40 100 20 t j =25 uf3a - uf3g uf3j - uf3m amperes amperes amperes junction capacitance,pf notes:1.rise time = 7ns max.input impedance = 1m .22pf. jjjjj 2.rise time =10ns max.source impedance=50 . instantaneous forward voltage, volts instantaneous forward current uf3a --- uf3m fig.1 -- test circuit diagram and reverse recovery time characteristic average forward current set time base for 20/30 ns/cm fig.2 -- typical forward characteristic fig.3 -- forward derating curve z fig.4 -- typical junction capacitance fig.5 -- peak forward surge current lead temperature, peak forward surge current number of cycles at 60hz reverse voltage,volts pulse generator (note2) d.u.t. 1 nonin- ductive 50 n 1. 10 n1. oscilloscope (note 1) (+) 25vdc (approx) (-) - 1 . 0 a - 0 . 25a 0 + 0 . 5 a t rr 1cm 0 0.01 0.1 1.0 10 100 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 50\100\200v 600\800\1000v t j =25 pulse width=300 diode semiconductor korea www.diode.kr
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